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4H-SiC深槽刻蚀及其形貌的改善

在其他条件不变的情况下，增加偏置电源功率可以消除微沟槽效应，但是这会导致深槽侧壁粗糙度的增加。增加腔室压强时，微沟槽效应也可以被消除，沟槽侧壁的形貌也会得到一定程度的改善。而且，腔室压强的增加也能获得更高的 SiC/Ni 刻蚀选择比，这意味着增加腔室压强更适合于消除微沟槽效应并且获得较低的深槽侧壁粗糙度。

Further reading: 董志华,刘辉,曾春红,张璇,孙玉华,崔奇,程知群,张宝顺.4H-SiC深槽刻蚀及其形貌的改善[J].固体电子学研究与进展,2022,42(03):239-243.

Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

The article introduces the changes of SiC under 24GeV/c proton irradiation, 2MeV electron irradiation, and neutron irradiation. With the increase of irradiation dose, the reverse leakage current of SiC decreases gradually, and the forward leakage current increases gradually. Meanwhile, the C-V curve shifts downward and becomes a horizontal line when the irradiation reaches a certain level(about 1e16). The effect of irradiation on leakage current may come from the formation of generation-recombination centers. In terms of the performance as detector, three alpha sources are used for testing. It can be seen that three peaks are visible at low irradiation(<5e14). After increasing the irradiation, although there is still a response to alpha particles, peaks cannot be distinguished. It is believed that high dose of irradiation(>1e15) can degrade SiC’s performance. On the other hand, with the increase of irradiation, some defects caused will reduce the charge collection rate, which will also degrade its performance. In conclusion, SiC can maintain good performance under low irradiation (around 1e14), but the performance will degrade obviously above 1e15 irradiation.

Further reading: J. M. Rafí et al., “Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors,” in IEEE Transactions on Nuclear Science, vol. 67, no. 12, pp. 2481-2489, Dec. 2020.